etch rate造句
例句与造句
- More often, all of the materials exposed to the etchant have a finite etch rate .
通常，所有暴露在刻蚀剂中的材料都具有一定的刻蚀速率。 - A study on etch rate of dry technique for hgcdte irfpas
焦平面探测阵列干法技术的刻蚀速率研究 - Temperature influence on etching rate of si deep trench using icp with sf6 o
刻蚀硅深槽基片温度对刻蚀速率的影响 - Influence of process parameters on the etching rate in inductively coupled plasma etcher
等离子体刻蚀中工艺参数对刻蚀速率影响的研究 - Testing of materials for semiconductor technology ; determination of etch rates of etching mixtures ; silicium - dioxid coating ; optical method
半导体工艺材料的检验.蚀刻混合剂浸蚀率的测定.第2部 - It's difficult to find etch rate in a sentence. 用etch rate造句挺难的
- Testing of materials for semiconductor technology - determination of etch rates of etching mixtures - part 3 : aluminium , gravimetric method
半导体技术试验.蚀刻混合剂浸蚀率测定.第3部分:铝.测 - Testing of materials for semiconductor technology ; determination of etch rates of etching mixtures ; silicium monocrystals ; gravimetric method
半导体工艺材料的检验.蚀刻混合剂浸蚀率的测定.第1部 - The results show that amorphous carbon films have high etching resistance against oxygen plasma , and etch rates of the films correlated not only with etching processing parameters , also with deposition conditions
结果表明非晶碳膜对于氧离子体具有高的抗刻蚀性，其刻蚀率不仅与刻蚀的过程参量有关，而且决定于膜的沉积条件。 - Poles - etching method is that the etching current caused by the external voltage is used to promote the intermediate ion product break away from the surface of substrate and keep the etching rate stable
电极腐蚀法是指在激光腐蚀的过程中,通过外加电压在溶液中形成腐蚀电流,促使中间离子产物脱离基片表面,使腐蚀持续稳定进行。 - To find out the effective slurry with suitable type of oxidizer and concentration , chemical etching experiment was applied to the litao3 wafer . the chemical etching effects were analysed by measuring etching rate and x - ray spectrum
采用化学腐蚀实验方法研究抛光液中氧化剂种类和浓度以及抛光液ph值对钽酸锂晶片化学去除的影响。 - Furthermore , the etching rate , roughness versus incident laser fluences and pulse number are investigated theoretically and experimentally in detail by 3d surface analyzer . then a new priciple of pmma etched by excimer laser is given : the process is the interaction result of photodecomposition ,
随后应用总结出的优化加工参数在该材料上刻蚀出了宽104 m ,深56 m ,矩形度高达80 % ,底面光滑的20个循环的pcr微流控芯片。 - The optimizing methods of main etching parameters , such as etching rate , uniformity and selectivity , were investigated by the orthogonal experiment , and these results can be used for setting main process parameters , adjusting them with a drifting from desired conditions , and optimizing etching selectivity
应用正交实验，进行了蚀刻速率、均匀性、选择比等主要蚀刻参数的优化，得出主要工艺参数的设置方法和理想条件漂移时的调整方法以及优化选择比的蚀刻方案。 - A varying - temperature etching method for fiber tip preparing was proposed , with which fiber tips with cone angle as large as 35 - 52 degree could be routinely made . to explore the mechanism of varying - temperature method the changing of the diameter of a fiber during etching process was carefully measured and an experiential formula was found . it reveals that the etching rate of fiber keeps constant until the diameter reduces to a certain amount , which explained the large cone angle obtainable with varying - temperature method
在光纤探针制作方面，本论文提出了一种变温腐蚀制备光纤探针的新方法，获得了35 52度的大锥角光纤探针；进一步对光纤探针腐蚀成形过程进行定量研究，发现当光纤直径腐蚀减小到一定程度以后，腐蚀速度随直径变小而加快；通过对多次实验结果进行拟合，得出了光纤直径随腐蚀时间变化的定量经验公式；借助该经验公式从理论上定量模拟了变温法获得大锥角针尖的过程。 - Process parameters related to the film quality are discussed ; relations are found between the etching rate and different process parameters when sio2 and cr thin films are etched in an inductively coupled plaslma ( icp ) etching equipment ; the tmah eroding solution ’ s ph value under different temperatures and concentrations are studied , since the etching process can be controlled by the ph value
3 .初步研究了利用pecvd淀积si3n4薄膜的工艺,讨论了影响薄膜质量的相关工艺参数;初步研究了用icp刻蚀sio2和cr的相关工艺;通过分析不同浓度tmah腐蚀液在不同温度下其ph值的变化,研究了以溶液ph值作为腐蚀溶液的控制参数。 - The feasibility that kaufman ion source is applied in reactive ion beam etching is discussed . etching characteristics of materials , including pr , cr , quartz , are investigated . the etch rate and mechanisms of such materials are measured and analyzed as a function of ion energy , ion beam density and ion incidence angle in pure ar and chf3 , respectively . the etch rate has shown a square root dependence on variation versus
深入研究了光刻胶、铬薄膜、石英等光学材料离子束刻蚀特性,分别以ar气和chf3为工作气体,研究光刻胶、铬薄膜、石英等的刻蚀速率随离子能量,束流密度和离子入射角度的变化关系,得到刻蚀速率与影响因素的拟合方程,为掩模的制作工艺路线提供了实验依据和理论指导。
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